2,4,6,8-Tetramethylcyclotetrasiloxane , 98% , 2370-88-9
Synonym(s):
1,3,5,7-Cyclotetra(methylsiloxane);1,3,5,7-Tetramethylcyclotetrasiloxane;TMCTS
CAS NO.：2370-88-9
Empirical Formula: C4H16O4Si4
Molecular Weight: 240.51
MDL number: MFCD00039567
EINECS: 219-137-4
| Pack Size | Price | Stock | Quantity |
| 5G | RMB52.00 | In Stock |
|
| 25G | RMB120.00 | In Stock |
|
| 100G | RMB414.40 | In Stock |
|
| 500G | RMB1477.60 | In Stock |
|
| others | Enquire |
PRODUCT Properties
| Melting point: | −69 °C(lit.) |
| Boiling point: | 134 °C(lit.) |
| Density | 0.986 g/mL at 25 °C(lit.) |
| vapor pressure | 0.05-479Pa at 20℃ |
| refractive index | n |
| Flash point: | 76 °F |
| storage temp. | 2-8°C |
| form | liquid |
| Specific Gravity | 0.991 |
| color | Colorless to Almost colorless |
| Water Solubility | Miscible with most organic solvents. Immiscible with water. |
| Sensitive | Moisture Sensitive |
| Hydrolytic Sensitivity | 3: reacts with aqueous base |
| BRN | 1787074 |
| InChIKey | BQYPERTZJDZBIR-UHFFFAOYSA-N |
| LogP | -2.4-5.54 at 25℃ |
Description and Uses
2, 4, 6, 8-TETRAMETHYLCYCLOTETRASILOXANE can be used as the precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, and gate dielectrics in thin-film transistors (TFT) (for example, for the preparation of ultralow dielectric constant pSiCOH film), and is a component of photochemically formed SiOX monolayers on TiO. It is a good impregnant of photoelectric material. It can be used for the manufacturing of modified siloxane with defined hydrogen content and chain quality.
2,4,6,8-Tetramethylcyclotetrasiloxane can occur addition reaction with unsaturated alkenes, so it’s utilized widely to synthesize variety functional reactive silicone fluids which is used to form silicone block copolymer, or used as crosslinker of vinyl addition silicone rubber. Tetramethyl-cyclotetrasiloxane is a good impregnant of photoelectric material. It is used to manufacture of modified siloxane with defined hydrogen content and chain quantity. It is also used in production of silicone polymers and acts as a precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics and semiconductors.
Safety
| Symbol(GHS) |   GHS02,GHS07 |
| Signal word | Warning |
| Hazard statements | H319-H226 |
| Precautionary statements | P280a-P305+P351+P338-P501a-P210-P233-P240-P241+P242+P243-P264-P280-P303+P361+P353-P305+P351+P338+P337+P313-P370+P378-P403+P235-P501 |
| Hazard Codes | Xi |
| Risk Statements | 10-36 |
| Safety Statements | 16-26-36 |
| RIDADR | UN 1993 3/PG 3 |
| WGK Germany | 3 |
| F | 10-21 |
| TSCA | Yes |
| HazardClass | 3 |
| PackingGroup | III |
| HS Code | 29319090 |
