Home Categories Inorganic chemistry Silicon carbide
A7274912

Silicon carbide , 99.9%metalsbasis , 409-21-2

Synonym(s):
;Silicon carbide fibers;Silicon carbide nanowhiskers;Silicon carbide whiskers

CAS NO.:409-21-2

Empirical Formula: CSi

Molecular Weight: 40.1

MDL number: MFCD00049531

EINECS: 206-991-8

Pack Size Price Stock Quantity
5g RMB25.60 In Stock
25G RMB66.40 In Stock
100G RMB164.80 In Stock
500G RMB613.60 In Stock
2.5kg RMB2445.60 In Stock
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Update time: 2022-07-08

PRODUCT Properties

Melting point: 2700 °C (lit.)
Density  3.22 g/mL at 25 °C (lit.)
refractive index  2.6500
solubility  Soluble in molten sodium hydroxide, potassium hydroxide and in molten iron.
form  nanopowder
color  Green
Specific Gravity 3.22
Resistivity 107–200 (ρ/μΩ.cm)
Water Solubility  Soluble in molten alkalis (NaOH, KOH) and molten iron. Insoluble in water.
Hydrolytic Sensitivity 1: no significant reaction with aqueous systems
Crystal Structure Cubic, Sphalerite Structure - Space Group F(-4)3m
Merck  14,8492
Exposure limits ACGIH: TWA 10 mg/m3; TWA 3 mg/m3; TWA 0.1 fiber/cm3
OSHA: TWA 15 mg/m3; TWA 5 mg/m3
NIOSH: TWA 10 mg/m3; TWA 5 mg/m3
Stability: Stability
InChIKey HBMJWWWQQXIZIP-UHFFFAOYSA-N
IARC 2A (Vol. 111) 2017
NIST Chemistry Reference Silicon monocarbide(409-21-2)
EPA Substance Registry System Silicon carbide (409-21-2)

Description and Uses

Silicon carbide is a hard covalently bonded material predominantly produced by the carbothermal reduction of silica. Silicon carbide is made by heating silica sand and petroleum coke packed around electrodes in an electric resistance furnace to above 2200°C. Depending on the exact reaction conditions the resulting silicon carbide is either a fine powder or a bonded mass that requires crushing and milling to produce a usable feedstock. This material is very resistant to abrasion and to corrosion with a molten slag. It also has excellent resistance to thermal spalling. However as it is a carbide, it will oxidise readily, silicon carbide has a fairly high conductivity.
Several hundred structures of silicon carbide (polytypes) have been identified which have different stacking arrangements for the silicon and carbon atoms. The simplest structure is a diamond structure which is designated /3-SiC. Other structures are either hexagonal or rhombic and are referred to as a-SiC.

Manufacture of abrasives and refractories, brake linings, heating elements, and thermistors.

Safety

Symbol(GHS) 
GHS08
Signal word  Danger
Hazard statements  H350i
Precautionary statements  P201-P202-P280-P308+P313-P405-P501
Hazard Codes  Xi
Risk Statements  36/37/38
Safety Statements  26-36
OEB B
OEL TWA: 10 mg/m3 (total)
WGK Germany  3
RTECS  VW0450000
TSCA  Yes
HS Code  28492000
Hazardous Substances Data 409-21-2(Hazardous Substances Data)

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